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| Composite Transistors XN04A88 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output 0.650.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 6 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 +0.2 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 1.90.1 5 2 0.95 4 3 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 60 50 7 100 200 -50 -50 -100 300 150 -55 to +150 Unit V V V mA mA V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: IZ Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 0.1 to 0.3 0.8 q 2SD601A+UNR511Q 1.1-0.1 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features +0.1 +0.1 1 Composite Transistors XN04A88 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob fT Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = 0, f = 1MHz VCB = 10V, IE = -2mA, f = 200MHz 160 0.1 3.5 80 MHz min 60 50 7 0.1 0.1 460 0.3 V typ max Unit V V V A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) RBE fT VCB = -10V, IE = 2mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA -30% 4.7 100 20 - 0.25 +30% V k MHz min -50 -50 - 0.1 - 0.5 -2.0 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter resistance Transition frequency 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN04A88 Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 60 Ta=25C 50 200 240 VCE=10V Ta=25C IC -- I B 120 IC -- VBE VCE=10V 25C Collector current IC (mA) Collector current IC (mA) IB=160A 40 140A 30 120A 100A 20 80A 60A 10 40A 20A 0 0 2 4 6 8 10 160 Collector current IC (mA) Ta=75C 80 -25C 120 80 40 40 0 0 200 400 600 800 1000 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=10 IB -- VBE 1200 VCE=10V VCE=10V Ta=25C 1000 600 Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 500 400 Ta=75C 300 25C Base current IB (A) 10 100 1 800 0.1 Ta=75C -25C 0.01 25C 600 200 -25C 400 100 200 0.001 0.1 1 10 100 0 0.1 0 1 0 0.2 0.4 0.6 0.8 1.0 Collector current IC (mA) Collector current IC (mA) Base to emitter voltage VBE (V) 3 Composite Transistors Cob -- VCB 6 XN04A88 Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 4 3 2 1 0 1 10 100 Collector to base voltage VCB (V) Characteristics charts of Tr2 IC -- VCE -160 Ta=25C -140 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 150 hFE -- IC VCE= -10V Forward current transfer ratio hFE 125 25C 100 Collector current IC (mA) -120 -100 -80 -60 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -1 Ta=75C 75 -0.1 Ta=-25C 75C 50 -25C -40 -20 0 0 -2 -4 -6 -8 -0.4mA -0.3mA -0.2mA -0.1mA -10 -12 25C 25 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO -- VIN -10000 VO=-5V Ta=25C -100 VIN -- IO Collector output capacitance Cob (pF) VO= -0.2V Ta=25C Cob -- VCB 6 f=1MHz IE=0 Ta=25C 5 Output current IO (A) Input voltage VIN (V) -1000 -10 4 -100 -1 3 2 -10 -0.1 1 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -10 -100 0 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) Collector to base voltage VCB (V) 4 |
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